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Quantification of Si(1-x)Gex samples with compositional gradient.

Quantification of Si(1-x)Gex samples with compositional gradient.

Analyze three or more samples with known concentration to solve the problem of two points.

SIMS (Secondary Ion Mass Spectrometry) is used to accurately quantify the concentration distribution of Ge in Si(1-x)Gex films with a compositional gradient used in devices, in the depth direction. When analyzing Si(1-x)Gex films with SIMS, there are two issues that must be resolved. The first issue is that the secondary ion intensity of Ge relative to Si changes significantly with variations in the compositional ratio, so it is necessary to determine the relative sensitivity factor for each compositional ratio. The second issue is that the sputtering rate at each analysis point changes due to variations in the compositional ratio of Si and Ge, so it is necessary to establish the relationship between the compositional ratio and the sputtering rate. To solve these two issues, samples with known concentrations were analyzed at more than three points, and the RSF and sputtering rates were determined. *For more details, please refer to the PDF document or feel free to contact us.*

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Case Studies on Depth Resolution Measurement in Compound Semiconductor Superlattice Samples

Case Studies on Depth Resolution Measurement in Compound Semiconductor Superlattice Samples

Results of depth resolution measurements using compound semiconductor superlattice samples are published!

This case study collection presents the results of depth resolution measurements conducted by Ion Tech Center Co., Ltd., which provides services such as ion implantation, film formation and analysis, and research and commercialization management. Using Q-pole SIMS (ULVAC: ADEPT-1010), we employed a compound semiconductor sample of Al0.28Ga0.72As/GaAs that was deposited by molecular beam epitaxy (MBE) in 50nm increments to obtain the results of depth resolution. [Overview of Contents] ■ Results of Depth Resolution Measurements *For more details, please refer to the catalog or feel free to contact us.*

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[Analysis Case] Evaluation of Element Distribution in Oxide ReRAM Operating Area Using SIMS

[Analysis Case] Evaluation of Element Distribution in Oxide ReRAM Operating Area Using SIMS

High-sensitivity evaluation of local elemental distribution in oxide devices using oxygen isotopes.

In oxide ReRAM, it was suggested that oxygen diffusion associated with the application of an electric field is related to memory operation (resistance change). Since SIMS analysis allows for the measurement of isotopes, utilizing the isotope 18O ion implantation technique enables the tracking of oxygen diffusion. For devices where 18O was locally implanted, a bridge structure that serves as the operating region was formed by applying an electric field, and elemental mapping revealed that the intensity of 18O in the bridge area was weak, indicating localized reduction.

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[Analysis Case] Evaluation of Interdiffusion Between Layers of CIGS Solar Cells Using SIMS

[Analysis Case] Evaluation of Interdiffusion Between Layers of CIGS Solar Cells Using SIMS

It is possible to achieve high-precision measurements that are not affected by surface irregularities.

In solar cells, surface roughness is utilized to effectively absorb sunlight. When conducting SIMS analysis, the surface roughness leads to a decrease in depth resolution. Measurements from the surface appear to show that elements like Cd, Zn, and O are diffusing into the CIGS layer due to the effects of surface roughness and knock-on (Figure 3), but measurements taken from the substrate side (back side) reveal that there is no significant diffusion of Cd, Zn, and O into the CIGS layer (Figure 4). In addition to interdiffusion, it is also possible to evaluate changes in the composition of the main components (Cu, In, Ga, Se) and the concentration distribution of impurities (B, Na, Fe).

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[Analysis Case] Evaluation of SiON Film by SIMS

[Analysis Case] Evaluation of SiON Film by SIMS

Evaluation of nitrogen in SiON with a film thickness of approximately 1 nm is possible.

It is possible to evaluate the distribution of nitrogen in SiON films in the depth direction, even down to low concentration areas where high-sensitivity SIMS analysis excels, and to assess the amount of nitrogen (unit: atoms/cm²) with high precision (Figure 1). Additionally, nitrogen can be converted to atomic% (Figure 2), and a fitting curve for nitrogen can be calculated, allowing for the determination of nitrogen's peak concentration, depth, and half-width through fitting (Figure 3).

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[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate

[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate

Measurement avoiding the effects of surface irregularities and high concentration layers using SSDP-SIMS.

By conducting SIMS analysis (SSDP-SIMS) from the substrate side, it is possible to obtain measurements that are not affected by the knock-on effects from the high-concentration layer on the surface due to surface roughness and sputtering. We evaluated the amount of boron penetration from the gate electrode (B-doped Poly-Si) into the substrate. Measurements from the substrate side showed no effects from knock-on, indicating that a more accurate evaluation of the penetration amount is possible. Thus, SSDP-SIMS is effective for assessing the barrier properties of barrier metals, the incorporation of metals into Low-k films, and the evaluation just beneath the rough silicide.

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Improvement of depth resolution by vertical incidence method.

Improvement of depth resolution by vertical incidence method.

SIMS: Secondary Ion Mass Spectrometry

■Measurement Method for Depth Direction Distribution (1) Limitations of Depth Direction Resolution in Oblique Incidence Method The dependence of depth direction resolution on primary ion energy in the oblique incidence method was investigated using δ-doped samples (Figure 1). It was found that in the oblique incidence method, there is a limit to the improvement of depth direction resolution due to the roughness of the crater bottom (Figure 2). (2) Improvement of Depth Direction Resolution by Vertical Incidence Method Figure 3 shows the relationship between the half-width of the B peak (δ-doped sample) and primary ion energy in both vertical and oblique incidence methods. In the region below 1 keV of primary ion energy, where there were limitations in improving resolution with the oblique incidence method, improvements in resolution have been achieved with the vertical incidence method.

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[Analysis Case] Evaluation of "Water" in Si Oxide Films and ITO Films using SIMS

[Analysis Case] Evaluation of "Water" in Si Oxide Films and ITO Films using SIMS

Depth-direction analysis of hydrogen using 'heavy water (D2O) treatment'

We will introduce a case where the permeability of water (H2O) in a thin film with a thickness of less than 1 µm was evaluated by measuring the distribution of deuterium (D) in the film. When hydrogen (H) is originally present in the thin film, it is difficult to distinguish whether the hydrogen is due to the influence of water. Therefore, treatment with heavy water (D2O) was performed, and the distribution of the naturally occurring isotope deuterium was measured in the depth direction using SIMS. By examining the depth distribution of deuterium, it is possible to estimate how deep the water has penetrated.

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[Analysis Case] Evaluation of Dopant Concentration Distribution in a-Si Thin Film Solar Cells Using SIMS

[Analysis Case] Evaluation of Dopant Concentration Distribution in a-Si Thin Film Solar Cells Using SIMS

Select measurement conditions according to the target element.

We will introduce a case where the concentration distribution of dopants in a-Si (amorphous silicon) was quantitatively evaluated in flexible thin-film Si solar cells. The sample, sealed with resin, was disassembled, and SIMS analysis was conducted. In the analysis of B (Figure 3), measurements were performed with enhanced depth resolution because it exists in shallow areas on the surface side. In the analysis of P (Figure 4), a large amount of H exists in a-Si, causing mass interference; therefore, measurements were conducted under conditions that separated H from Si using high mass resolution methods to detect only P.

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Analysis case: Evaluation of the in-plane distribution of additives in solder alloys.

Analysis case: Evaluation of the in-plane distribution of additives in solder alloys.

Capable of highly sensitive evaluation of the distribution of additives at the ppm level.

High impact resistance is required for the joints of lead-free solder used in electronic devices such as mobile terminals. To address this issue, solder alloys with trace amounts of elements like Ni have been developed. This document presents a case study comparing the in-plane distribution of a five-component lead-free solder with trace amounts of Ni and Ge added to a Sn-Ag-Cu system, and a three-component solder without additives, using imaging from D-SIMS, which excels in high-sensitivity analysis.

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[Analysis Case] Composition Analysis of Compound Semiconductors by SIMS

[Analysis Case] Composition Analysis of Compound Semiconductors by SIMS

Capable of evaluating the composition of the main elemental components of compound semiconductors in the depth direction.

Generally, in SIMS, the quantification of major elements with concentrations exceeding a certain percentage is considered to be low. However, by using the M Cs+ (M: target element) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major elements in the depth direction. An example of depth compositional evaluation for Al and Ga in AlGaAs is presented.

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About MSDM

About MSDM

TOF-SIMS: Time-of-Flight Secondary Ion Mass Spectrometry

In depth profiling analysis using TOF-SIMS, if the positional information on the plane (x, y) is ignored, mass spectra exist at each depth (z), resulting in three-dimensional data of depth, mass, and spectral intensity. The visualization of this three-dimensional data as a single image is called MSDM (Mass Spectra Depth Mapping) representation.

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[Analysis Case] Evaluation of Residual Contaminants in Blood Components

[Analysis Case] Evaluation of Residual Contaminants in Blood Components

Visualization of wipe residues using TOF-SIMS

When describing cleaning methods in brochures for medical devices, it is necessary to confirm the validity of those cleaning methods. In this case, as a verification experiment for the wiping method of medical devices, we applied bovine serum albumin (BSA), a blood model drug, to sheets of acetyl cellulose (TAC), SUS-made scalpels, and glass, and evaluated the residual components before and after wiping using TOF-SIMS. As a result, it was found that ethanol is more suitable than water for wiping BSA, and that the wiping effectiveness varies depending on the substrate. Measurement method: TOF-SIMS Product field: Medical devices and pharmaceuticals Analysis purpose: Composition evaluation, identification, composition distribution evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.

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Regarding interface and depth direction resolution

Regarding interface and depth direction resolution

SIMS: Secondary Ion Mass Spectrometry

The SIMS analysis profile of the interface between different materials changes with a certain width in the depth direction. This is due to the characteristics of SIMS analysis, which are influenced by ion beam mixing and the roughness of the sputtered surface. The detected impurities represent averaged information up to the mixed depth, detecting ions from regions with a width in the depth direction. Therefore, the interface position is generally defined as the location where the ion intensity of the main constituent elements reaches 50%.

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[Analysis Case] Analysis of the HTM Layer in Perovskite Solar Cells

[Analysis Case] Analysis of the HTM Layer in Perovskite Solar Cells

Evaluation of component and depth direction distribution is possible.

Perovskite solar cells have excellent conversion efficiency in a film form and can be manufactured at low cost, leading to active research and development towards practical application. TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is effective for component analysis of the HTM layer (hole transport layer), evaluation of main components, dopants, and the depth distribution of impurities. This document presents a case study of depth analysis from the HTM layer to the perovskite layer. Measurement method: TOF-SIMS Product field: Solar cells Analysis purpose: Identification, distribution evaluation For more details, please download the document or contact us.

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[Analysis Case] Imaging of the Cuticle

[Analysis Case] Imaging of the Cuticle

It is possible to evaluate the distribution of components in the hair cuticle!

Our organization offers imaging of cuticles. The evaluation of cuticles has been limited to structural observation using electron microscopy due to their fine structure, and detailed component distribution has remained unclear. By using TOF-SIMS, which can evaluate the distribution of inorganic and organic materials at the sub-micron level, it is possible to assess the distribution of various components within the cuticle. This document presents the results of evaluating hair and visualizing the component distribution within the cuticle. [Measurement and Processing Method] ■ [TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry *For more details, please download the PDF or feel free to contact us.

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[Analysis Case] Diamond Evaluation Case Using SIMS

[Analysis Case] Diamond Evaluation Case Using SIMS

It is possible to quantitatively evaluate impurity elements and assess film thickness.

Diamonds possess excellent physical properties such as high breakdown electric fields, making them promising materials for next-generation power devices and quantum devices. By doping diamonds with impurity elements, they can function as high-performance semiconductors. To understand the concentration distribution of the doped elements, SIMS analysis, which can detect impurities in the ppb to ppm range with high sensitivity, is effective. Additionally, it is possible to evaluate the film thickness of each layer from the impurity concentration distribution. MST offers a variety of diamond standard samples and can quantify over 30 different elements.

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High-performance automated SIMS

High-performance automated SIMS

It is possible to provide rapid feedback for process development and defect analysis of semiconductor devices!

Secondary Ion Mass Spectrometry (SIMS) enables depth profiling analysis with high sensitivity and high mass resolution for all elements. Furthermore, our company has added automation features from sample introduction to analysis, allowing for high-precision automated measurements. As a result, we can provide rapid feedback for process development and defect analysis in semiconductor devices, where quick responses are required. 【Features】 ■ High sensitivity measurement: Capable of high sensitivity measurement of heavy elements such as Ag, In, and Sb. ■ High mass resolution measurement ・M/ΔM = ~10,000 ・Evaluation of contamination levels of P, Al, Fe, Ni, etc., in Si and SiO2. *For more details, please download the PDF or feel free to contact us.

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Secondary Ion Mass Spectrometry (SIMS)

Secondary Ion Mass Spectrometry (SIMS)

There are various types of mass spectrometers, such as magnetic field type, quadrupole type, and time-of-flight type, which are used according to the purpose of the analysis!

Secondary Ion Mass Spectrometry (SIMS) is a highly sensitive analytical technique capable of identifying and quantifying trace impurity elements at the ppb level. Since measurements are conducted while sputtering, it is possible to obtain the depth distribution of impurities within the film. Please feel free to contact us when you need assistance. 【Features】 ■ Magnetic Field SIMS: Used for evaluating impurities that require high sensitivity. ■ Quadrupole SIMS: Used for evaluations that require depth resolution and for assessing multilayer films that include insulating films. ■ Time-of-Flight SIMS: Used for evaluating the molecular structure level of trace substances on the surface, as well as for assessing the contamination state of organic materials and minute foreign substances on the surface. *For more details, please download the PDF or feel free to contact us.

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High-performance magnetic field SIMS

High-performance magnetic field SIMS

SIMS equipped with three features: high sensitivity, high mass resolution, and high depth resolution!

The "high-performance magnetic field SIMS" is a device that can analyze all elements with high sensitivity in depth direction. With high-performance SIMS capable of high-sensitivity and high mass resolution analysis even in low-energy analysis, it has become possible to achieve high-precision measurements in challenging, extremely shallow regions. As a result, it can now be applied to semiconductor devices, which are advancing in miniaturization and diversification of materials. 【Features】 ■ High sensitivity measurement (high transmission rate) ■ High mass resolution ■ Various measurements possible from ultra-low energy analysis to standard analysis ■ Equipped with a high-brightness ion gun ■ Automatic measurement with high repeatability precision, capable of measuring up to 25 samples *For more details, please download the PDF or feel free to contact us.

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Dynamic SIMS

Dynamic SIMS

Suitable for analysis of glass, metal, ceramics, silicon, compound semiconductors, shallow implants, and more!

"DYNAMIC SIMS" is a secondary ion mass spectrometry method that can detect trace amounts of all elements (from H to U) in samples with high sensitivity, ranging from ppm to ppb. It allows for qualitative analysis and depth profiling, and additionally enables high-precision quantitative analysis using standard samples (conducted at our partner company's facility). The minimum beam diameter is approximately 30 µm, and it can be further reduced depending on the material. 【Features】 ■ Automatic loading/unloading of samples, high throughput (24 samples/load) ■ Unmatched depth profiling capability and high depth resolution, wide dynamic range ■ Optimized for the analysis of glass, metals, ceramics, silicon, compound semiconductors, shallow implants, etc. ■ Highest detection limit: from ppm to ppb (10^-6 to 10^-9) *For more details, please refer to the PDF document or feel free to contact us.

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SIMS (Secondary Ion Mass Spectrometry)

SIMS (Secondary Ion Mass Spectrometry)

This is a method for qualitative and quantitative analysis of components contained in a sample by detecting secondary ions and measuring the detection amount at each mass.

When ions are incident on the sample surface, various particles such as electrons, neutral particles, and ions are emitted from the sample surface. SIMS is a technique that detects these ions and measures the detection quantity at each mass to perform qualitative and quantitative analysis of the components contained in the sample. - High sensitivity (ppb to ppm) - Analysis of all elements from H to U is possible - Wide detection concentration range (from major component elements to trace impurities) - Quantitative analysis using standard samples is possible - Depth direction analysis is possible - Evaluation with depth direction resolution of a few to several tens of nm is possible - Measurement of micro-regions up to a few micrometers in size is possible - Isotope analysis is possible - Destructive analysis

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[TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry

[TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry

This is a method for structural analysis of the sample surface. Due to its sensitivity to the surface compared to other analytical devices, it is suitable for identifying organic contaminants on the very surface.

This is a method for structural analysis of sample surfaces. It is suitable for identifying organic contamination on the very surface due to its sensitivity compared to other analytical devices. Using a sputter ion source, it is possible to analyze the distribution of inorganic and organic materials in the depth direction. - Structural analysis and identification of organic and inorganic compounds are possible. - Coordination data from foreign substance inspection devices can be linked. - Qualitative analysis is possible from micron-order microforeign substances to several centimeters. - It is possible to analyze the very surface with high sensitivity. - Image analysis is possible. - Qualitative analysis of depth direction analysis is possible.

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[Analysis Case] Evaluation of the Depth Distribution of B near the Si Surface using SIMS

[Analysis Case] Evaluation of the Depth Distribution of B near the Si Surface using SIMS

High-precision B profile analysis through sample cooling.

The concentration distribution of boron (B) in silicon (Si), which significantly affects the characteristics of device design, can be evaluated with high sensitivity and high depth resolution through SIMS analysis. However, it has been found that under general analysis conditions, distortions occur in the concentration distribution of B due to measurement-related factors. In MST, it has been confirmed that sample cooling is effective for correcting these distortions, enabling a more accurate evaluation of the concentration distribution.

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[Analysis Case] Depth Direction Analysis of TFT Wiring Intersection Using SSDP-SIMS

[Analysis Case] Depth Direction Analysis of TFT Wiring Intersection Using SSDP-SIMS

Analysis using SSDP is also possible for microdomains and glass substrates.

An example is shown where secondary ion mass spectrometry (SIMS) was used to analyze the intersection (4μm×10μm) of the data signal wiring and gate electrode wiring of a commercially available TFT LCD from the substrate side (SSDP-SIMS). By measuring from the substrate side (SSDP-SIMS), it becomes possible to provide data free from the influence of high-concentration layers or metal films on the surface side.

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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

Can be evaluated with high reproducibility.

Due to the miniaturization of devices, it is necessary to evaluate the depth distribution of impurities in extremely shallow regions. To perform an accurate evaluation, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. In this study, the relative standard deviation of the surface density of B calculated from six measurements conducted over multiple days using a 1 keV oxygen ion beam on Si wafers implanted with B+ at low energy was found to be less than 3%, demonstrating that high reproducibility can be achieved in the evaluation of extremely shallow impurity distributions, similar to conventional SIMS analysis.

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[Analysis Case] Investigation of Causes of Peeling in Plating and Coating

[Analysis Case] Investigation of Causes of Peeling in Plating and Coating

Identification of contamination sources on the cleavage surface using TOF-SIMS.

When delamination occurs, it is important to identify the components that have worsened the adhesion at the interface. By using a peeling process to physically delaminate at the interface of interest and measuring the components present on that surface with TOF-SIMS, it is possible to investigate the cause of delamination. TOF-SIMS detects secondary ions that are ionized while maintaining the structure of organic materials, allowing us to obtain information about the origin of the components present at the delamination surface, making it effective for investigating the causes of delamination and the process. Measurement methods: TOF-SIMS, peeling, disassembly Product fields: LSI, memory, manufacturing equipment, components Analysis purposes: Evaluation of chemical bonding states, failure analysis, defect analysis For more details, please download the materials or contact us.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.

SiC is used as a power device material due to its physical properties, but unlike Si, the diffusion of dopants after thermal treatment following ion implantation is difficult. Therefore, it is necessary to control the distribution in the depth direction through multi-step ion implantation. SIMS analysis can evaluate impurity concentrations in the depth direction with high sensitivity (below ppm), making it suitable for assessing the distribution of dopant elements in SiC. It is also possible to evaluate the distribution of light elements (such as H, C, O, F, etc.). Please contact us regarding any elements you would like to evaluate.

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[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.

In general, the quantification of major elements with concentrations exceeding a certain percentage in SIMS is considered to be low. However, by using the M Cs+ (M: element of interest) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major element elements in the depth direction. An example of depth compositional evaluation for Al, Ga, and In in GaN-based LED structures is presented.

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[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

IGZO films are materials that are being researched and developed as TFT materials for displays. There are concerns that the diffusion of metal elements into the IGZO film may degrade the TFT characteristics, so it is necessary to accurately measure the metal concentration within the film for evaluating the device characteristics and reliability using IGZO films. We will introduce a case where the Ti concentration in the IGZO film was evaluated from the opposite side of the metal electrode using SSDP-SIMS.

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