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Quantification of Si(1-x)Gex samples with compositional gradient.

Quantification of Si(1-x)Gex samples with compositional gradient.

Analyze three or more samples with known concentration to solve the problem of two points.

SIMS (Secondary Ion Mass Spectrometry) is used to accurately quantify the concentration distribution of Ge in Si(1-x)Gex films with a compositional gradient used in devices, in the depth direction. When analyzing Si(1-x)Gex films with SIMS, there are two issues that must be resolved. The first issue is that the secondary ion intensity of Ge relative to Si changes significantly with variations in the compositional ratio, so it is necessary to determine the relative sensitivity factor for each compositional ratio. The second issue is that the sputtering rate at each analysis point changes due to variations in the compositional ratio of Si and Ge, so it is necessary to establish the relationship between the compositional ratio and the sputtering rate. To solve these two issues, samples with known concentrations were analyzed at more than three points, and the RSF and sputtering rates were determined. *For more details, please refer to the PDF document or feel free to contact us.*

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Case Studies on Depth Resolution Measurement in Compound Semiconductor Superlattice Samples

Case Studies on Depth Resolution Measurement in Compound Semiconductor Superlattice Samples

Results of depth resolution measurements using compound semiconductor superlattice samples are published!

This case study collection presents the results of depth resolution measurements conducted by Ion Tech Center Co., Ltd., which provides services such as ion implantation, film formation and analysis, and research and commercialization management. Using Q-pole SIMS (ULVAC: ADEPT-1010), we employed a compound semiconductor sample of Al0.28Ga0.72As/GaAs that was deposited by molecular beam epitaxy (MBE) in 50nm increments to obtain the results of depth resolution. [Overview of Contents] ■ Results of Depth Resolution Measurements *For more details, please refer to the catalog or feel free to contact us.*

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[Analysis Case] Evaluation of Element Distribution in Oxide ReRAM Operating Area Using SIMS

[Analysis Case] Evaluation of Element Distribution in Oxide ReRAM Operating Area Using SIMS

High-sensitivity evaluation of local elemental distribution in oxide devices using oxygen isotopes.

In oxide ReRAM, it was suggested that oxygen diffusion associated with the application of an electric field is related to memory operation (resistance change). Since SIMS analysis allows for the measurement of isotopes, utilizing the isotope 18O ion implantation technique enables the tracking of oxygen diffusion. For devices where 18O was locally implanted, a bridge structure that serves as the operating region was formed by applying an electric field, and elemental mapping revealed that the intensity of 18O in the bridge area was weak, indicating localized reduction.

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[Analysis Case] Evaluation of Interdiffusion Between Layers of CIGS Solar Cells Using SIMS

[Analysis Case] Evaluation of Interdiffusion Between Layers of CIGS Solar Cells Using SIMS

It is possible to achieve high-precision measurements that are not affected by surface irregularities.

In solar cells, surface roughness is utilized to effectively absorb sunlight. When conducting SIMS analysis, the surface roughness leads to a decrease in depth resolution. Measurements from the surface appear to show that elements like Cd, Zn, and O are diffusing into the CIGS layer due to the effects of surface roughness and knock-on (Figure 3), but measurements taken from the substrate side (back side) reveal that there is no significant diffusion of Cd, Zn, and O into the CIGS layer (Figure 4). In addition to interdiffusion, it is also possible to evaluate changes in the composition of the main components (Cu, In, Ga, Se) and the concentration distribution of impurities (B, Na, Fe).

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[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate

[Analysis Case] Evaluation of B Penetration Amount from SSDP-SIMS Gate to Substrate

Measurement avoiding the effects of surface irregularities and high concentration layers using SSDP-SIMS.

By conducting SIMS analysis (SSDP-SIMS) from the substrate side, it is possible to obtain measurements that are not affected by the knock-on effects from the high-concentration layer on the surface due to surface roughness and sputtering. We evaluated the amount of boron penetration from the gate electrode (B-doped Poly-Si) into the substrate. Measurements from the substrate side showed no effects from knock-on, indicating that a more accurate evaluation of the penetration amount is possible. Thus, SSDP-SIMS is effective for assessing the barrier properties of barrier metals, the incorporation of metals into Low-k films, and the evaluation just beneath the rough silicide.

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Improvement of depth resolution by vertical incidence method.

Improvement of depth resolution by vertical incidence method.

SIMS: Secondary Ion Mass Spectrometry

■Measurement Method for Depth Direction Distribution (1) Limitations of Depth Direction Resolution in Oblique Incidence Method The dependence of depth direction resolution on primary ion energy in the oblique incidence method was investigated using δ-doped samples (Figure 1). It was found that in the oblique incidence method, there is a limit to the improvement of depth direction resolution due to the roughness of the crater bottom (Figure 2). (2) Improvement of Depth Direction Resolution by Vertical Incidence Method Figure 3 shows the relationship between the half-width of the B peak (δ-doped sample) and primary ion energy in both vertical and oblique incidence methods. In the region below 1 keV of primary ion energy, where there were limitations in improving resolution with the oblique incidence method, improvements in resolution have been achieved with the vertical incidence method.

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[Analysis Case] Evaluation of "Water" in Si Oxide Films and ITO Films using SIMS

[Analysis Case] Evaluation of "Water" in Si Oxide Films and ITO Films using SIMS

Depth-direction analysis of hydrogen using 'heavy water (D2O) treatment'

We will introduce a case where the permeability of water (H2O) in a thin film with a thickness of less than 1 µm was evaluated by measuring the distribution of deuterium (D) in the film. When hydrogen (H) is originally present in the thin film, it is difficult to distinguish whether the hydrogen is due to the influence of water. Therefore, treatment with heavy water (D2O) was performed, and the distribution of the naturally occurring isotope deuterium was measured in the depth direction using SIMS. By examining the depth distribution of deuterium, it is possible to estimate how deep the water has penetrated.

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[Analysis Case] Evaluation of Dopant Concentration Distribution in a-Si Thin Film Solar Cells Using SIMS

[Analysis Case] Evaluation of Dopant Concentration Distribution in a-Si Thin Film Solar Cells Using SIMS

Select measurement conditions according to the target element.

We will introduce a case where the concentration distribution of dopants in a-Si (amorphous silicon) was quantitatively evaluated in flexible thin-film Si solar cells. The sample, sealed with resin, was disassembled, and SIMS analysis was conducted. In the analysis of B (Figure 3), measurements were performed with enhanced depth resolution because it exists in shallow areas on the surface side. In the analysis of P (Figure 4), a large amount of H exists in a-Si, causing mass interference; therefore, measurements were conducted under conditions that separated H from Si using high mass resolution methods to detect only P.

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[Analysis Case] Depth Direction Analysis of Degradation Components in GCIB_Ar Cluster Organic Materials

[Analysis Case] Depth Direction Analysis of Degradation Components in GCIB_Ar Cluster Organic Materials

Component evaluation of organic EL layer structures and degradation layers using GCIB under controlled atmosphere.

This paper presents a case study analyzing the degradation components of organic materials that deteriorate due to atmospheric exposure, using GCIB (Ar cluster). The experiment utilized the organic EL material, Rubrene. Measurements of the atmosphere-exposed samples using TOF-SIMS revealed the presence of a mass (m/z 564) estimated to be Rubrene peroxide, as well as low molecular weight benzene-related masses (m/z 77, 105). It was confirmed that these degradation-related components exist at depths of approximately 1μm or more from the surface. *GCIB: Gas Cluster Ion Beam

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[Analysis Case] Composition Analysis of Compound Semiconductors by SIMS

[Analysis Case] Composition Analysis of Compound Semiconductors by SIMS

Capable of evaluating the composition of the main elemental components of compound semiconductors in the depth direction.

Generally, in SIMS, the quantification of major elements with concentrations exceeding a certain percentage is considered to be low. However, by using the M Cs+ (M: target element) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major elements in the depth direction. An example of depth compositional evaluation for Al and Ga in AlGaAs is presented.

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About MSDM

About MSDM

TOF-SIMS: Time-of-Flight Secondary Ion Mass Spectrometry

In depth profiling analysis using TOF-SIMS, if the positional information on the plane (x, y) is ignored, mass spectra exist at each depth (z), resulting in three-dimensional data of depth, mass, and spectral intensity. The visualization of this three-dimensional data as a single image is called MSDM (Mass Spectra Depth Mapping) representation.

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[Analysis Case] Evaluation of Residual Contaminants in Blood Components

[Analysis Case] Evaluation of Residual Contaminants in Blood Components

Visualization of wipe residues using TOF-SIMS

When describing cleaning methods in brochures for medical devices, it is necessary to confirm the validity of those cleaning methods. In this case, as a verification experiment for the wiping method of medical devices, we applied bovine serum albumin (BSA), a blood model drug, to sheets of acetyl cellulose (TAC), SUS-made scalpels, and glass, and evaluated the residual components before and after wiping using TOF-SIMS. As a result, it was found that ethanol is more suitable than water for wiping BSA, and that the wiping effectiveness varies depending on the substrate. Measurement method: TOF-SIMS Product field: Medical devices and pharmaceuticals Analysis purpose: Composition evaluation, identification, composition distribution evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.

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Regarding interface and depth direction resolution

Regarding interface and depth direction resolution

SIMS: Secondary Ion Mass Spectrometry

The SIMS analysis profile of the interface between different materials changes with a certain width in the depth direction. This is due to the characteristics of SIMS analysis, which are influenced by ion beam mixing and the roughness of the sputtered surface. The detected impurities represent averaged information up to the mixed depth, detecting ions from regions with a width in the depth direction. Therefore, the interface position is generally defined as the location where the ion intensity of the main constituent elements reaches 50%.

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[Analysis Case] Analysis of the HTM Layer in Perovskite Solar Cells

[Analysis Case] Analysis of the HTM Layer in Perovskite Solar Cells

Evaluation of component and depth direction distribution is possible.

Perovskite solar cells have excellent conversion efficiency in a film form and can be manufactured at low cost, leading to active research and development towards practical application. TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is effective for component analysis of the HTM layer (hole transport layer), evaluation of main components, dopants, and the depth distribution of impurities. This document presents a case study of depth analysis from the HTM layer to the perovskite layer. Measurement method: TOF-SIMS Product field: Solar cells Analysis purpose: Identification, distribution evaluation For more details, please download the document or contact us.

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[Analysis Case] Imaging of the Cuticle

[Analysis Case] Imaging of the Cuticle

It is possible to evaluate the distribution of components in the hair cuticle!

Our organization offers imaging of cuticles. The evaluation of cuticles has been limited to structural observation using electron microscopy due to their fine structure, and detailed component distribution has remained unclear. By using TOF-SIMS, which can evaluate the distribution of inorganic and organic materials at the sub-micron level, it is possible to assess the distribution of various components within the cuticle. This document presents the results of evaluating hair and visualizing the component distribution within the cuticle. [Measurement and Processing Method] ■ [TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry *For more details, please download the PDF or feel free to contact us.

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